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US 2006/0216864 A1Published application
Stacked die in die BGA package
AssigneeMicron Technology, Inc.
InventorsHock Tan, Thiam Lim, Victor Tan, Chee Neo, Michael Tan, Beng Chew, Cheng Pour
Life of this patent
Estimating the term…
Abstract
Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.
Claims38
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die having a first surface and a second surface with a recess disposed therein, and a second die;
- mounting the second surface of the first die on the substrate with an adhesive element situated within the recess;
- and
- mounting the second die on the first die.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- providing a first die comprising first and second surfaces;
- forming a recess in the second surface of the first die;
- mounting the second surface of the first die on the substrate with an adhesive element situated within the recess;
- and
- mounting the second die on the first die.
2 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- removing a portion of thickness from a surface of a first die to form a recess sized to receive an adhesive element therein;
- mounting the first die on a substrate with the adhesive element situated within the recess;
- and
- mounting a second die on the first die.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- providing a first die comprising first and second surfaces;
- removing a portion of thickness of the first die from the second surface to form a recess;
- mounting an adhesive element on the substrate, on the second surface of the first die within the recess, or both;
- attaching the first die onto a substrate with the adhesive element;
- and
- mounting a second die on the first die.
3 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- attaching a first die on a substrate with an adhesive element situated within a recess of the first die;
- mounting a second die on the first die;
- and
- mounting a third die on the second die with bond pads of the second die situated within a recessed edge portion along a perimeter of the third die, the recessed edge portion having a height sufficient for clearance of bonding elements attached to and extending from the bond pads of the second die.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- attaching a first die on a substrate with an adhesive element situated within a recess of the first die;
- mounting a second die on the first die;
- providing a third die having first and second surfaces, and a perimeter;
- removing a thickness from the second surface of the third die along the perimeter to form a recessed edge portion;
- and
- mounting the third die on the second die with bond pads of the second die situated within the recessed edge portion, the recessed edge portion having a height sufficient for clearance of bonding elements extending from the bond pads of the second die.
3 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- attaching a first die on a substrate with an adhesive element situated within a recess of the first die;
- and
- mounting a second die on the first die.
A method of fabricating a semiconductor device, comprising the steps of:
- mounting a first die on a substrate with an adhesive element situated within a recess of the first die, the first die and adhesive element each having a thickness, such that an overall thickness of the first die and the adhesive element mounted on the substrate is less than each of the thicknesses of the first die and the adhesive element combined;
- and
- mounting a second die on the first die.
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die, and a second die, each die having a thickness, the second die having a first surface and a second surface having a recess formed therein;
- mounting the first die on the substrate;
- and
- mounting the second die on the first die whereby the first die is at least partially received within the recess of the second die such that an overall thickness of the first and second dies within the device is less than each of the thicknesses of the first and second dies combined.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- attaching a first die to a substrate;
- and
- mounting a second die on the first die with the first die situated within a recess of the second die such that an overall thickness of the first and second dies within the device is less than each thickness of the first and second dies combined.
A method of fabricating a semiconductor device, comprising the steps of:
- mounting a first die on a substrate;
- removing a portion from a surface of a second die to form a recess sized to receive the first die therein;
- and
- mounting the second die on the first die with the first die situated at least partially within the recess such that the first and second dies within the device have a thickness less than each thickness of the first and second dies combined.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- providing a first die;
- providing a second die comprising first and second surfaces;
- forming a recess in the second surface of the second die;
- mounting the first die on the substrate;
- and
- mounting the second die on the first die such that the first die is at least partially received within the recess of the second die and an overall thickness of the first and second dies within the device is less than each thickness of the first and second dies combined.
3 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- mounting a first die on a substrate;
- removing a portion of the second die from a surface to form a recess sized to receive the first die therein;
- mounting an adhesive element on the first die, on the surface of the second die within the recess, or both;
- and
- mounting the second die on the first die with the first die situated within the recess and the adhesive element between the first and second dies such that an overall thickness of the first and second dies within the device is less than each thickness of the first and second dies combined.
2 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- providing a substrate, a first die having a thickness, and a second die having a thickness and a surface with a recess therein;
- applying an adhesive element to the surface of the second die within the recess;
- mounting the first die on the substrate;
- and
- mounting the second die on the first die whereby the first die is at least partially received within the recess of the second die and secured to the adhesive element within the recess, and an overall thickness of the first and second dies within the device is less than each thickness of the first and second dies combined.
2 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- attaching a first die to a substrate;
- and
- mounting a second die on the first die such that the first die is at least partially received within a recess of the second die and secured to the second die by an adhesive element situated within the recess, and an overall thickness of the first and second dies within the device is less than each thickness of the first and second dies combined.
A method of fabricating a semiconductor device, comprising the steps of:
- attaching a first die on a substrate;
- mounting a second die on the first die with the first die situated within a recess of the second die such that an overall thickness of the first and second dies within the die assembly is less than each thickness of the first and second dies combined;
- and
- mounting a third die on the second die with bond pads of the second die situated within a recessed edge portion along a perimeter of the third die, the recessed edge portion having a height sufficient for clearance of bonding elements attached to and extending from the bond pads of the second die.
1 more element
A method of fabricating a semiconductor device, comprising the steps of:
- attaching a first die on a substrate;
- mounting a second die on the first die with the first die situated within a recess of the second die such that an overall thickness of the first and second dies within the die assembly is less than each thickness of the first and second dies combined;
- and
- providing a third die having a perimeter;
- removing a thickness from a surface of the third die along the perimeter to form a recessed edge portion;
- and
- mounting the third die on the second die with bond pads of the second die situated within the recessed edge portion, the recessed edge portion having a height sufficient for clearance of bonding elements extending from the bond pads of the second die.
4 more elements
Dependencies are inferred from the claim text.