Schottky diode device with aluminium pickup of backside cathode

An integrated circuit package comprising:

• a semiconductor chip having a passivation layer forming the top surface of the semiconductor chip and a metal pad formed on the passivation layer;
• a discrete electronic device having a first terminal formed on a first surface and a second terminal formed on a second surface opposite the first surface of the discrete electronic device, the first surface of the discrete electronic device being attached to the metal pad using a conductive adhesive structure;
• and
• an encapsulation material encapsulating the semiconductor chip and the discrete electronic device,
• wherein an electrical connection is formed between the metal pad and one of a bond pad of the semiconductor chip or a package post of the integrated circuit package.

A boost converter integrated circuit package comprising:

• a boost converter integrated circuit having a passivation layer forming the top surface of the boost converter integrated circuit and a metal pad formed on the passivation layer;
• a discrete Schottky diode having an anode terminal formed on a topside and a cathode terminal formed on the backside of the Schottky diode, the backside of the discrete Schottky diode being attached to the metal pad using a conductive adhesive structure;
• and
• an encapsulation material encapsulating the boost converter integrated circuit and the discrete Schottky diode,
• wherein a first electrical connection is formed between the metal pad and a first bond pad of the boost converter integrated circuit, thereby electrically connecting the cathode terminal to the first bond pad and a second electrical connection is formed using a bond wire between the anode terminal on the top side of the Schottky diode and a package post of the integrated circuit package.