Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board

A method of manufacturing an organic field effect transistor, comprising the steps of:

• (A) forming a gate electrode on a substrate,
• (B) thereafter forming a gate insulation layer over an entire surface,
• (C) then forming source/drain electrodes on said gate insulation layer, and
• (D) thereafter forming a channel formation region in a portion, between said electrodes, of said gate insulation layer, wherein
• in said step (D), a nozzle for applying an organic semiconductor material coating liquid and said substrate are moved relative to each other where said nozzle is disposed on a lower side of said substrate, and a substrate surface provided thereon with said gate insulation layer and said source/drain electrodes and controlled in wettability is faced down, so as thereby to apply said organic semiconductor material coating liquid to the portion, between said electrodes, of said gate insulation layer, and thereafter said organic semiconductor material coating liquid is dried so as thereby to obtain a channel formation region including the organic semiconductor material.

A method of manufacturing an organic field effect transistor, comprising the steps of:

• (A) forming a gate electrode on a substrate,
• (B) thereafter forming a gate insulation layer on an entire surface,
• (C) then forming a channel formation region and channel formation region extension portions on said gate insulation layer, and
• (D) thereafter forming source/drain electrodes on said channel formation region extension portions, wherein
• in said step (C), a nozzle for applying an organic semiconductor material coating liquid and said substrate are moved relative to each other where said nozzle is disposed on a lower side of said substrate and a substrate surface provided thereon with said gate insulation layer and controlled in wettability is faced down, so as thereby to apply said organic semiconductor material coating liquid to said gate insulation layer, and thereafter said organic semiconductor material coating liquid is dried so as thereby to obtain said channel formation region and said channel formation region extension portions on which is included an organic semiconductor material.

A method of manufacturing an organic field effect transistor, comprising the steps of:

• (A) forming source/drain electrodes on a substrate,
• (B) thereafter forming a channel formation region in a portion, between said electrodes, of said substrate,
• (C) then forming a gate insulation layer on an entire surface, and
• (D) thereafter forming a gate electrode on said gate insulation layer, wherein
• in said step (B), a nozzle for applying an organic semiconductor material coating liquid and said substrate are moved relative to each other where a substrate surface provided thereon with said source/drain electrodes and controlled in wettability is faced down, so as thereby to apply said organic semiconductor material coating liquid to a portion, between said electrodes, of said substrate, and thereafter said organic semiconductor material coating liquid is dried so as thereby to obtain said channel formation region including an organic semiconductor material.

A method of manufacturing an organic field effect transistor, comprising the steps of:

• (A) forming a channel formation region and channel formation region extension portions on a substrate,
• (B) thereafter forming source/drain electrodes on said channel formation region extension portions,
• (C) then forming a gate insulation layer over an entire surface, and
• (D) thereafter forming a gate electrode on said gate insulation layer, wherein
• in said step (A), a nozzle for applying an organic semiconductor material coating liquid and said substrate are moved relative to each other where said nozzle is disposed on a lower side of said substrate and a substrate surface controlled in wettability is faced down, so as thereby to apply said organic semiconductor material coating liquid to said substrate, and thereafter said organic semiconductor material coating liquid is dried so as thereby to obtain said channel formation region and said channel formation region extension portions on which is included an organic semiconductor material.