Method of forming a microelectronic device

A method of forming a microelectronic device comprising the steps of:

• forming a sensor component, comprising a sensor structure and a conductive trace formed on a first wafer, the first wafer including a handle layer, a buried oxide layer and an active layer;
• forming a capping component formed on a second wafer, the second wafer including a handle layer, a buried oxide layer;
• bonding the first wafer to the second wafer;
• etching away the handle layer of the first wafer and the handle layer of the second wafer subsequent to bonding the first wafer to the second wafer;
• and
• etching a through hole in the capping component using the buried oxide layer in the second wafer as a hard mask to expose the conductive trace formed on the first wafer.

A method of forming a device comprising the steps of:

• forming a sensor component on a first SOI semiconductor wafer;
• forming a capping component on a second SOI semiconductor wafer;
• bonding the first SOI semiconductor wafer to the second SOI semiconductor wafer;
• and
• wafer thinning the first SOI semiconductor wafer and the second SOI semiconductor wafer subsequent to bonding.