Positive resist composition and pattern forming method using the same
AssigneeFuji Photo Film Co., Ltd.
InventorsShuji Hirano, Kazuyoshi Mizutani
Life of this patent
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Abstract
The invention provides a positive resist composition for the pattern formation by the use of actinic rays or radiation, ensuring that the sensitivity, resolution and pattern profile are good, the line edge roughness is small and the surface roughness is satisfied, and a pattern forming method using the composition, wherein the positive resist composition is a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (B) a resin of which solubility in an alkali developer increases under the action of an acid, the resin comprising a specific repeating unit; and a pattern forming method using the composition.
Claims11
A positive resist composition comprising:
- (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation;
- and (B) a resin of which solubility in an alkali developer increases under the action of an acid, the resin comprising at least a repeating unit represented by the following formula (B1) or (B2):
- wherein
- Z represents an alkyl group, a hydroxyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group,
- Lc1 represents an atomic group for forming a lactone structure together with two carbon atoms of the aromatic ring,
- Lc2 represents a group having a lactone structure,
- Ra and Rb each independently represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group,
- m represents an integer of 1 to 4, and
- n represents an integer of 0 to 4.
Dependencies are inferred from the claim text.