Nanolaminate thin films and method for forming the same using atomic layer deposition
OwnerMing Mao, Randhir Bubber +1inventors
InventorsMing Mao, Randhir Bubber, Thomas Schneider
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Abstract
A nanolaminate thin film and a method for forming the same using atomic layer deposition are disclosed. The method includes forming an aluminum oxide layer having a first thickness on at least a portion of a substrate surface by sequentially pulsing a first precursor and a first reactant into an enclosure containing the substrate. A layer of silicon dioxide is formed on at least a portion of the aluminum oxide layer by sequentially pulsing a second precursor and a second reactant into the enclosure to form a nanolaminate thin film.
Claims27
A method for forming a nanolaminate thin film using atomic layer deposition, comprising:
- forming an aluminum oxide layer having a first thickness on at least a portion of a substrate surface by sequentially pulsing a first precursor and a first reactant into an enclosure containing the substrate;
- and
- forming a silicon dioxide layer having a second thickness on at least a portion of the aluminum oxide layer by sequentially pulsing a second precursor and a second reactant into the enclosure to form a nanolaminate thin film.
An method for forming a nanolaminate thin film using atomic layer deposition (ALD), comprising:
- forming an aluminum oxide layer having a first thickness on at least a portion of a substrate surface by sequentially pulsing trimethylaluminum (TMA) and water into an enclosure containing the substrate;
- and
- forming a silicon dioxide layer having a second thickness on at least a portion of the aluminum oxide layer by sequentially pulsing TMA and tris(tert-butoxy)silanol into the enclosure to form a read head gap layer.
A thin film, comprising:
- an ALD-formed aluminum oxide layer having a first thickness, the aluminum oxide layer formed on at least a portion of a substrate surface;
- and
- an ALD-formed silicon dioxide layer having a second thickness formed on at least a portion of the aluminum oxide layer, the aluminum oxide layer and the silicon dioxide layer cooperating to form a nanolaminate thin film.
Dependencies are inferred from the claim text.