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US 2006/0216532 A1Published application
Methods and apparatus for devices having improved capacitance
AssigneeMicron Technology, Inc.
InventorKarl Robinson
Life of this patent
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Abstract
Some embodiments of the invention include a capacitor in which a dielectric of the capacitor is formed by oxidizing at least a portion of a metal layer. Other embodiments are described and claimed.
Claims31
A dielectric layer formed by a process comprising:
- forming a metal layer overlying a starting substrate;
- contacting the metal layer with an electrolytic solution;
- applying a potential across the electrolytic solution and the metal layer;
- and
- oxidizing at least a portion of the metal layer to form an oxidized layer such that the oxidized layer forms at least a portion of the dielectric layer.
2 more elements
A capacitor formed by a process comprising:
- forming a first capacitor plate;
- forming a metal layer overlying the first capacitor plate;
- contacting the metal layer with an electrolytic solution;
- applying a potential across the electrolytic solution and the metal layer;
- and
- oxidizing at least a portion of the metal layer to form an oxidized layer such that the oxidized layer forms at least a portion of a dielectric layer of the capacitor.
3 more elements
A capacitor formed by a process comprising:
- forming an insulative layer overlying a substrate;
- masking the insulative layer to define a region in which to fabricate the capacitor;
- removing the insulative layer in an unmasked region to expose a portion of the substrate;
- depositing a polysilicon layer overlying the insulative layer and the substrate and contacting the substrate;
- removing portions of the polysilicon layer to expose an upper surface of the insulative layer;
- depositing a metal layer such that the metal layer overlies the polysilicon layer;
- contacting the metal layer with an electrolytic solution;
- applying an electrical potential to the electrolytic solution and the metal layer;
- oxidizing at least a portion of the metal layer to form a metal oxide such that the metal oxide functions as a dielectric layer;
- and
- forming an electrically conductive layer overlying the metal oxide.
8 more elements
A dielectric layer formed by a process comprising:
- forming a metal capacitor plate on a substrate assembly;
- applying a potential across the metal capacitor plate;
- and
- oxidizing at least a portion of the metal capacitor plate to form at least a portion of the dielectric layer.
1 more element
A capacitor formed by a process comprising:
- forming a first capacitor plate;
- forming a metal layer overlying the first capacitor plate;
- oxidizing a portion of the metal layer to form an oxidized portion of the metal layer and a non-oxidized portion of the metal layer;
- and
- forming a second capacitor plate such that the second capacitor plate directly contacts the oxidized portion of the metal layer.
2 more elements
Dependencies are inferred from the claim text.