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AssigneeEbara Corporation
InventorsHiroyuki Fujimura, Roberto Serikawa, Naoki Ishikawa, Takahiro Mishima
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The present invention intends to provide a diamond-coated silicon to be used in an industrially applicable diamond electrode. A diamond-coated silicon comprising a silicon substrate having a thickness of 500 μm or less is coated at least partially with electrically conductive diamond. The silicon substrate having a thickness of 500 μm or less is manufactured by the plate-like crystal growth process, and then the silicon substrate is coated with the electrically conductive diamond by the chemical vapor deposition process to manufacture the diamond-coated silicon. The diamond-coated silicon is flexible and can be stuck to an electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be readily obtained.
A diamond-coated silicon comprising a silicon substrate having a thickness of 500 μm or less coated at least partially with electrically conductive diamond, wherein the silicon substrate is manufactured by the plate-like crystal growth process.
A manufacturing method of a diamond-coated silicon comprising coating a silicon substrate having a thickness of 500 μm or less at least partially with electrically conductive diamond by a chemical vapor deposition process.
A manufacturing method of a diamond-coated silicon comprising the steps of;
Dependencies are inferred from the claim text.