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US 2006/0216432 A1Published application
Plasma treatment method and method of manufacturing semiconductor device
AssigneeSony Corporation
InventorsKeiji Ohshima, Takahiro Saito, Kazunori Nagahata
Life of this patent
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Abstract
An insulation film on a substrate is subjected to a plasma treatment using a gas containing at least either of a CH-based gas and a CO-based gas, whereby variations in the dielectric constant of the insulation film and adsorption of water onto the insulation film can be suppressed.
Claims6
A plasma treatment method wherein
- an insulation film on a substrate is subjected to a plasma treatment using a gas containing at least either of a CH-based gas and a CO-based gas.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a layer insulation film on a substrate;
- forming an opening portion in said layer insulation film;
- and
- subjecting a surface of said layer insulation film to a plasma treatment using a gas containing at least either of a CH-based gas and a CO-based gas.
1 more element
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a layer insulation film on a substrate;
- subjecting a surface of said layer insulation film to a plasma treatment using a gas containing either of a CH-based gas and a CO-based gas;
- and
- forming an opening portion in said layer insulation film.
1 more element
Dependencies are inferred from the claim text.