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US 2006/0216420 A1Published application
Manufacturing process of thin film transistor
AssigneeSeiko Epson Corporation
InventorHiroyuki Shimada
Life of this patent
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Abstract
A manufacturing process of a thin film transistor, includes: forming a silicon film of a preset thickness, in which film stress becomes under 2.0×109 dyne/cm2 in absolute value, on one surface of a transparent substrate; and forming a thin film transistor on other surface of the transparent substrate on which the silicon film is not formed.
Claims5
A manufacturing process of a thin film transistor, comprising:
- forming a silicon film of a preset thickness, in which film stress becomes under 2.0×109 dyne/cm2 in absolute value, on one surface of a transparent substrate;
- and
- forming a thin film transistor on other surface of the transparent substrate on which the silicon film is not formed.
The manufacturing process of a thin film transistor, comprising:
- depositing up at least two silicon films of different film-making conditions on one surface of the transparent substrate to a preset thickness;
- and
- forming thereafter a thin film transistor on the other surface of the transparent substrate on which the silicon film is not formed.
Dependencies are inferred from the claim text.