Electro-optic modulation
AssigneeCornell Research Foundation, Inc.
InventorsMichal Lipson, Bradley Schmidt, Sameer Pradhan, Qianfan Xu
Life of this patent
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Abstract
A silicon electro-optic waveguide modulator is formed using a metal-oxide-semiconductor (MOS) configuration. Various embodiments are described using different modes of operation of the MOS diode and gate oxide thicknesses. In one example, a high-speed submicron waveguide active device is formed using silicon-on-insulator. A micro-ring resonator intensity-modulator exhibits switching times on the order of tens of pS with modulation depth of 73% with a bias voltage of 5 volts.
Claims28
An electro-optic modulator comprising:
- a ring waveguide supported by a substrate;
- means for tuning an effective index of the ring waveguide;
- and
- a I/O waveguide optically coupled to the ring waveguide.
An electro-optic modulator comprising:
- a ring waveguide supported by a substrate;
- means for injecting or removing carriers in the ring waveguide to tune an effective index of the ring waveguide;
- and
- an I/O waveguide optically coupled to the ring waveguide.
An electro-optic modulator comprising:
- a ring waveguide supported by a substrate;
- and
- a p-i-n junction embedded in the ring waveguide having highly doped p and n regions at least partially separated from a resonating mode of the ring waveguide.
An electro-optic modulator for light of wavelength L comprising:
- a high-Q resonator with a resonant frequency at L and at least X difference between resonant frequencies at L
- means for tuning an effective index of the ring waveguide;
- and
- a waveguide optically coupled to the ring waveguide.
A method for electro-optic modulation at GHz speed by injecting charge carriers into a high-Q resonator and quickly applying reverse bias to remove carriers.
An electro-optic modulator and wherein an index of refraction may be controlled to effect significant light transmission changes.
An electro-optic modulator comprising:
- a ring waveguide supported by a substrate, wherein the ring waveguide comprises a circular shaped strip waveguide formed on a thin slab layer;
- a p-i-n junction embedded in the thin slab layer such that highly doped p and n regions are spaced apart from the strip waveguide.
An electro-optic modulator comprising:
- a ring waveguide supported by a substrate;
- and
- a MOS diode integrated with the ring waveguide to cause changes in a refractive index of the ring waveguide.
An electro-optic modulator comprising:
- an optical resonator supported by a substrate;
- means for modulating carrier concentration in the optical resonator;
- and
- an I/O waveguide optically coupled to the optical resonator.
Dependencies are inferred from the claim text.