Window structure semiconductor laser device and manufacturing method therefor

Abstract

An AlGaInP based window structure semiconductor laser device of the present invention has an optical waveguide in which a lower cladding layer, an active layer having a quantum well layer, and an upper cladding layer are laminated in this order and which emits light from a light-emitting end surface that is formed on an end of the optical waveguide. A window portion having an active layer in which the quantum well layer is disordered is formed in an end portion including the light-emitting end surface in the optical waveguide. A light intensity distribution in a vertical direction for the laminated layers in the window portion spreads further than a light intensity distribution in the vertical direction in a non-window portion which is adjacent to the window portion inside the optical waveguide. A length of the window portion from the light-emitting end surface to the non-window portion is not smaller than 48 μm and not greater than 80 μm.

Dependencies are inferred from the claim text.