Quantum cascade laser
AssigneeNat. Inst. of Inf. & Comm. Tech., Inc. Admin. Agcy
InventorsHiroaki Yasuda, Iwao Hosako
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Abstract
A quantum cascade laser is provided that is constituted as a superlattice device configured by repeatedly overlaying AlSb or GaAlSb layers and GaSb layers and forming electrode layers at the opposite ends thereof, wherein the thickness of the GaSb layers constituting quantum wells for performing stimulated emission of light is defined so that the energy difference formed between the ground state and the first excited state in the GaSb layers becomes the LO phonon energy of GaSb. The quantum cascade laser lases at lower frequency than conventionally and has a structure that is easy to fabricate.
Claims18
A quantum cascade laser constituted as a superlattice device comprising AlSb or GaAlSb layers and GaSb layers repeatedly overlaid and electrode layers formed at opposite ends thereof, wherein the GaSb layers constituting quantum wells for performing stimulated emission of light has a thickness defined so that an energy difference formed between a ground state and a first excited state in the GaSb layers becomes LO phonon energy of GaSb.
Dependencies are inferred from the claim text.