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US 2006/0215478 A1Published application
Semiconductor memory
AssigneeElpida Memory, Inc.
InventorsTomoyuki Shibata, Kanji Oishi
Life of this patent
Estimating the term…
Abstract
In a semiconductor memory having a plurality of memory banks that can be independently accessed, remedying bit registers that are substituted for defective memory cells are respectively provided for memory banks in a one-to-one relationship. Also, means for sharing the plurality of remedying bit registers in each memory bank is arranged.
Claims10
A semiconductor memory having a plurality of memory banks that can be independently accessed, comprising:
- a plurality of read/write amplifiers respectively provided for said plurality of memory banks in a one-to-one relationship and used to read and write data from/to memory cells in said memory banks;
- a plurality of remedying bit registers respectively provided for said plurality of memory banks in a one-to-one relationship and provided as redundant memory cells that are used instead of a defective memory cell in a corresponding memory bank;
- a remedying judgment circuit for judging whether access is made to said defective memory cells or not;
- and
- a switch control circuit device for stopping an operation of said corresponding read/write amplifier when access is made to said defective memory cells.
2 more elements
A semiconductor memory having a plurality of memory banks that can be independently accessed, comprising:
- a plurality of read/write amplifiers respectively provided for said plurality of memory banks in a one-to-one relationship and used to read and write data from/to memory cells in said memory banks;
- a plurality of remedying bit registers shared by said plurality of memory banks and provided as redundant memory cells that are used instead of defective memory cells in said memory banks;
- a remedying judgment circuit for judging whether access is made to said defective memory cells or not;
- and
- a switch control circuit device for stopping each operation of said read/write amplifiers when access is made to said defective memory cells.
2 more elements
Dependencies are inferred from the claim text.