Back to results
US 2006/0215447 A1Published application
Asynchronous Memory Array Read/Write Control Circuit
AssigneeBeedar Technology Inc.
InventorsPingFu Hsieh, HungJu Wang, JuiLi Sun
Life of this patent
Estimating the term…
Abstract
A non-volatile memory control circuit provides a simple source line/word line generator instead of a complicated decoder. The invention also includes a new design to reduce power consumption for many wireless applications with stable or unstable power source. The selectable multi-characteric global cell is one of advantages of the present invention.
Claims12
An asynchronous memory control circuit comprising:
- a plurality of source line terminals to be adapted to multiple memory words;
- a plurality of bit line terminals to be adapted to multiple memory bits;
- a twin voltage terminal to receive and generate multi-voltage sources;
- a single sense amplifier to receive single memory cell data;
- a procedure terminals to receive procedure signals;
- a global cell to provide base current source.
3 more elements
The method to perform erased and programmed function in present invention of asynchronous memory array, comprising:
- a method of erase and program by bit;
- a method of erase and program by block;
- a method of erase and program by whole memory array;
- a method of erase and program by fixed source line selected block and arbitrary bit line selected bit;
- a method of erase and program by fixed bit line selected bit and arbitrary source line selected block.
2 more elements
Dependencies are inferred from the claim text.