Magneto-resistive memory cells and devices having asymmetrical contacts and methods of fabrication therefor

A memory device comprising:

• a plurality of first electrode lines arranged in parallel on a substrate;
• a plurality of second electrode lines arranged in parallel on the substrate transverse to the first electrode lines;
• a plurality of electrode plugs electrically coupled to the first electrode lines, respective ones of the electrode plugs disposed between ones of the first and second electrode lines at respective intersections thereof;
• and
• a plurality of magneto-resistive memory elements, a respective one of which has a first surface electrically coupled to a respective one of the electrode plugs and a second surface electrically coupled to a second electrode line, wherein the second surface has a greater area than the first surface.

A memory device comprising:

• respective pluralities of parallel electrode lines disposed on a substrate at respective levels, wherein pluralities of electrode lines on adjacent levels extend transverse to one another;
• respective insulating layers between the pluralities of electrode lines of adjacent levels;
• respective pluralities of magneto-resistive memory elements disposed between adjacent ones of the insulating layers and the pluralities of electrode lines;
• and
• respective pluralities of electrode plugs penetrating respective ones of the insulating layers at intersections of the electrode lines and coupling the electrode lines to the magneto-resistive memory elements.

A method of fabricating a memory cell, the method comprising:

• forming an insulating layer on a substrate;
• forming a contact hole in the insulating layer;
• forming a first electrode in the contact hole;
• forming a magneto-resistive memory element on the first electrode;
• and
• forming a second electrode on the magneto-resistive memory element.