Architectures for cpp ring shaped (rs) devices
AssigneeHoneywell International Inc.
InventorRomney Katti
Life of this patent
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Abstract
A current-perpendicular-to-plane (CPP) ring-shaped (RS) magnetoresistive random access memory (MRAM) element is provided in several embodiments including operational functionality of static read (SR) and dynamic read (DR). According to an embodiment, a memory element has one or more vias passing through a center hole in the CPP RS MRAM element. Each end of each via is coupled with a separate write line segment that extends radially from the center hole past a perimeter of the ring-shaped element. The write lines and vias are configured to generate magnetic fields for switching a magnetization direction of one or more layers of the ring-shaped bits in the array.
Claims16
In a magnetoresistive memory array, a memory cell comprising:
- a first dynamic read ring-shaped multilayer magnetoresistive element having an inner circumference, an outer circumference, a top edge, and a bottom edge, wherein the inner circumference defines a center hole of the element, wherein the multilayer includes a spacer layer sandwiched by a first magnetic layer and a second magnetic layer;
- a row write line threaded through the center hole and electrically isolated from the element, the row write line coupled to a first power source for providing a row write current;
- a column write line threaded through the center hole and electrically isolated from the element, the column write line coupled to a second power source for providing a column write current;
- a bit line coupled in series with the element such that a current flowing through the bit line passes perpendicularly through the spacer layer of the element, wherein the bit line includes a first segment coupled through the first ring-shaped element and a second segment coupled through the second ring-shaped element and
- a pair of transistors controlled by a select line, wherein each segment of the bit line is coupled to a ground through one of the transistors, whereby activation of the select line closes a circuit allowing a current to pass through the layers of the ring-shaped elements.
In magnetoresistive memory array, a memory cell for storing a bit of data comprising:
- a first ring-shaped multilayer magnetoresistive element having an inner circumference, an outer circumference, a top edge, and a bottom edge, wherein the inner circumference defines a center hole of the element, wherein the multilayer includes a spacer layer sandwiched by a first magnetic layer and a second magnetic layer;
- a second ring-shaped multilayer magnetoresistive element having an inner circumference, an outer circumference, a top edge, and a bottom edge, wherein the inner circumference defines a center hole of the element, wherein the multilayer includes a spacer layer sandwiched by a first magnetic layer and a second magnetic layer;
- a row write line threaded through the center hole of each ring-shaped element and electrically isolated from the elements, the row write line coupled to a power source for providing a row write current;
- a first column write line threaded through the center hole of the first ring-shaped element and electrically isolated from the elements;
- a second column write line threaded through the center hole of the second ring-shaped element and electrically isolated from the elements;
- a bit line coupled with the elements such that a current flowing through the bit line passes perpendicularly through the spacer layer of the first ring-shaped element and through the spacer layer of the second ring-shaped element, wherein the bit line includes a first segment coupled through the first ring-shaped element and a second segment coupled through the second ring-shaped element;
- and
- a pair of transistors controlled by a select line, wherein each segment of the bit line is coupled to a ground through one of the transistors, whereby activation of the select line closes a circuit allowing a current to pass through the layers of the ring-shaped elements.
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Dependencies are inferred from the claim text.