Conduction control device
AssigneeHitachi, Ltd.
InventorsJorg Wunderlich, Kenchi Ito
Life of this patent
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Abstract
A conduction control device comprises a first ferromagnetic region having relatively high coercivity, a second ferromagnetic region having relatively low coercivity and a junction region disposed between the first and second ferromagnetic regions. The device also comprises a gate for applying a field to the junction region so as to control charge carrier density within the junction region.
Claims32
A conduction control device comprising:
- a first ferromagnetic region having relatively high coercivity;
- a second ferromagnetic region having relatively low coercivity;
- a junction region disposed between the first and second ferromagnetic regions for magnetically decoupling said first and second ferromagnetic regions;
- and
- a gate for applying an electric field to the junction region so as to control charge carrier density within the junction region.
A device comprising:
- a conductive region;
- a ferromagnetic region;
- a junction region connecting the conductive regions and the ferromagnetic region;
- and
- a gate for applying an electric field to the junction region so as to control charge carrier density within the junction region.
A method of fabricating a conduction control device, the method comprising:
- providing a first ferromagnetic region having relatively high coercivity;
- providing a second ferromagnetic region having relatively low coercivity;
- providing a junction region disposed between the first and second ferromagnetic regions for magnetically decoupling said first and second ferromagnetic regions;
- and
- providing a gate for applying an electric field to the junction region so as to control charge carrier density within the junction region.
A method of operating a conduction control device having a channel comprising a first ferromagnetic region having relatively high coercivity, a second ferromagnetic region having relatively low coercivity, a junction region disposed between the first and second ferromagnetic regions for magnetically decoupling said first and second ferromagnetic regions;
- and a gate for applying a field to the junction region so as to control charge carrier density within the junction region, the method comprising:
- applying a first bias to the gate for increasing charge carrier density in the junction region;
- and
- driving a first current pulse through the channel, said current pulse having a first current amplitude greater than a critical value for reversing magnetisation of the second ferromagnetic region.
A method of operating a conduction control device having a channel comprising a first ferromagnetic region having relatively high coercivity, a second ferromagnetic region having relatively low coercivity, a junction region disposed between the first and second ferromagnetic regions for magnetically decoupling said first and second ferromagnetic regions;
- and a gate for applying a field to the junction region so as to control charge carrier density within the junction region, the method comprising:
- applying a magnetic field to said first and second ferromagnetic regions for reversing magnetization of the second, but not the first, ferromagnetic region, said magnetic field being greater than a critical field of the second ferromagnetic region, but lower than a critical field of the first ferromagnetic region.
Dependencies are inferred from the claim text.