Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Wook JEONG, Jun-Hyok Kong, Ji-Hye Yi, Beak-Hyung Cho
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Abstract
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase more easily than the first crystalline phase. For example the first crystalline phase may be a hexagonal closed packed structure and the first crystalline phase may be a face centered cubic structure.
Claims30
A method of reducing a reset current for resetting a portion of phase change material in a memory cell of a phase change memory device comprising:
- converting at least a portion of the phase change material including a first crystalline phase to one of a second crystalline phase and an amorphous phase, the second crystalline phase transitioning to the amorphous phase more easily than the first crystalline phase.
A method of reducing a reset current for resetting a portion of phase change material in a memory cell of a phase change memory device to, comprising:
- converting at least a portion of the phase change material in a mixed phase state to a single phase state.
A method of reducing a reset current for resetting a portion of phase change material in a memory cell of a phase change memory device to an amorphous phase, comprising:
- applying a current to the phase change material such that the reset current of the phase change material after the applying step is less than the reset current before the applying step.
A method of reducing a reset current for resetting a portion of phase change material in a memory cell of a phase change memory device to an amorphous phase, comprising:
- performing a heat treatment on the phase change memory device such that a reset current of the phase change material after the performing step is less than a reset current before the performing step.
A phase change memory device, comprising:
- an upper electrode;
- a lower electrode;
- and
- phase change material disposed between the upper and lower electrode, the phase change material being entirely in a single phase, the single phase being one of an amorphous phase and a face centered cubic phase.
A phase change memory device, comprising:
- an upper electrode;
- a lower electrode;
- and
- phase change material disposed between the upper and lower electrode, the phase change material including a lower portion in contact with the lower electrode and a remaining portion, the lower portion being in one of a first crystalline phase and an amorphous phase, and the remaining portion including at least a second crystalline phase, the first crystalline phase transitioning to the amorphous phase more easily than the second crystalline phase.
A method of improving operation a phase change memory device including at least one memory cell having phase change material, comprising:
- treating the phase change material such that an energy required to change a portion of the phase change material from a crystalline phase to an amorphous phase is reduced.
Dependencies are inferred from the claim text.