Gallium nitride semiconductor light emitting device and method of manufacturing the same

A method of manufacturing a GaN semiconductor light emitting device comprising the steps of:

• a) preparing a substrate for growing a GaN semiconductor material;
• b) forming an n-type GaN clad layer doped with Al on the substrate;
• c) forming an active layer having a quantum well structure on the n-type GaN clad layer;
• and
• d) forming a p-type GaN clad layer on the active layer, the method further comprising the step of:
• e) forming a buffer layer on the substrate before the step b).

The method as set forth in claim, further comprising the steps of:

• f) removing a predetermined portion of the active layer and p-type clad layer to expose a predetermined portion of the n-type clad layer;
• g) forming a p-metal layer on the p-type clad layer;
• and
• h) forming a p-side bonding electrode and an n-side electrode on the p-metal layer and on the exposed portion of the n-type clad GaN layer, respectively.