Semiconductor device
AssigneeFujitsu Limited
InventorTomoyuki Akiyama
Life of this patent
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Abstract
A semiconductor device, comprising a semiconductor stacking body configured so as to sandwich an active layer by a p-type semiconductor layer and an n-type semiconductor layer and having plural regions along the active layer, plural electrodes provided on the p-type semiconductor layer or the n-type semiconductor layer and provided one for each of the plural regions, and a switch operatively connected to at least one of the plural electrodes for switching bias voltage application directions, is configured such that each of the plural regions is forward biased by a voltage applied via the electrode and becomes an amplification region when the switch is turned to one side, and is backward biased by a voltage applied via the electrode and becomes an attenuation region when the switch is turned to the other side.
Claims16
A semiconductor device comprising:
- a semiconductor stacking body configured so as to sandwich an active layer by a p-type semiconductor layer and an n-type semiconductor layer and having plural regions along said active layer;
- plural electrodes provided on said p-type semiconductor layer or said n-type semiconductor layer and provided one for each of said plural regions;
- and
- a switch operatively connected to at least one of said plural electrodes for switching bias voltage application directions,
- wherein each of said plural regions is forward biased by a voltage applied via said electrode and becomes an amplification region when said switch is turned to one side, and is backward biased by a voltage applied via said electrode and becomes an attenuation region when said switch is turned to the other side.
Dependencies are inferred from the claim text.