Electro-optical device, method of manufacturing the same, and electronic apparatus

An electro-optical device, comprising:

• a substrate;
• data lines and scanning lines above the substrate, the data and scanning lines intersecting each other in plan view to form intersections;
• thin film transistors disposed corresponding to the intersections of the data and scanning lines, the thin film transistors being above the substrate and below the data lines;
• storage capacitors disposed above the data lines, each of the storage capacitors including a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode that are stacked with respect to each other, such that the pixel-potential-side electrode is below the dielectric film and the dielectric film is below the fixed-potential-side electrode;
• pixel electrodes disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors;
• and
• an interlayer insulating film stacked above at least a portion of the pixel-potential-side electrode, the interlayer insulating film defining an opening, the fixed-potential-side electrode of one of the storage capacitors being disposed on the respective dielectric film, and the dielectric film being disposed on the respective pixel-potential-side electrode at the opening.

A method of manufacturing an electro-optical device including a substrate, data lines and scanning lines above the substrate, the data and scanning lines intersecting each other in plan view to form intersections, thin film transistors disposed below the data lines, storage capacitors disposed above the data lines, and pixel electrodes disposed above the storage capacitors, the method comprising:

• forming the thin film transistors above the substrate in regions corresponding to the intersections of the data lines and the scanning lines;
• forming the data lines above the thin film transistors;
• forming each of the storage capacitors above the data lines by sequentially stacking a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode;
• and
• forming the pixel electrodes for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate such that each of the pixel electrodes is electrically connected to each of the thin film transistors and the pixel-potential-side electrode;
• the forming of each of the storage capacitors including forming an interlayer insulating film above the dielectric film, forming an opening passing through the interlayer insulating film, and stacking the fixed-potential-side electrode on the dielectric film exposed through the opening.

A method of manufacturing an electro-optical device including a substrate, data lines and scanning lines above the substrate, the data and scanning lines intersecting each other in plan view to form intersections, thin film transistors disposed below the data lines, storage capacitors disposed above the data lines, and pixel electrodes disposed above the storage capacitors, the method comprising:

• forming the thin film transistors above the substrate in regions corresponding to the intersections of the data lines and the scanning lines;
• forming the data lines above the thin film transistors;
• forming each of the storage capacitors above the data lines by sequentially stacking a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode;
• and
• forming the pixel electrodes for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate such that each of the pixel electrodes is electrically connected to each of the thin film transistors and the pixel-potential-side electrode;
• the forming of each of the storage capacitors including forming an interlayer insulating film above the pixel-potential-side electrode, forming an opening passing through the interlayer insulating film, and stacking the dielectric film and the fixed-potential-side electrode on the pixel-potential-side electrode exposed through the opening.