Single plate-type color solid-state image sensing device
AssigneeFuji Photo Film Co., Ltd.
InventorNobuo Suzuki
Life of this patent
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Abstract
A color solid-state image sensing device including: a semiconductor substrate having a surface portion where high density impurity regions connected to signal reading circuits respectively are formed; a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate; and a red light detecting photodiode formed in a deep portion of the semiconductor substrate, wherein connection regions which are provided so as to be continued to the photodiodes respectively and exposed to the surface of the semiconductor substrate are formed only in portions adjacent to the high density impurity regions so that electric charge accumulated in each photodiode can be transferred to corresponding one of the corresponding high density impurity regions.
Claims18
A color solid-state image sensing device comprising:
- a semiconductor substrate having a surface portion where signal reading circuits and high density impurity regions connected to the signal reading circuits respectively are formed;
- a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate;
- a red light detecting photodiode formed in a deep portion of the semiconductor substrate;
- and
- a green light detecting photoelectric conversion film,
- wherein connection regions which are provided so as to be continued to the photodiodes respectively and exposed to a surface of the semiconductor substrate are formed only in portions adjacent to the high density impurity regions so as to transfer electric charge accumulated in each photodiode to corresponding one of the high density impurity regions.
A color solid-state image sensing device comprising:
- a semiconductor substrate having a surface portion where signal reading circuits and high density impurity regions connected to the signal reading circuits respectively are formed;
- a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate;
- a red light detecting photodiode formed in a deep portion of the semiconductor substrate;
- and
- a green light detecting photoelectric conversion film,
- wherein the color solid-state image sensing device further comprises MOS switches for transferring electric charge accumulated in a charge storage layer of each photodiode to corresponding one of the high density impurity regions when a read voltage is applied between the charge storage layer of the photodiode and the corresponding high density impurity region connected to the photodiode.
A color solid-state image sensing device comprising:
- a semiconductor substrate having a surface portion where signal reading circuits and high density impurity regions connected to the signal reading circuits respectively are formed;
- a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate;
- a red light detecting photodiode formed in a deep portion of the semiconductor substrate;
- and
- a green light detecting photodiode formed in an intermediate portion between the shallow portion and the deep portion,
- wherein connection regions which are provided so as to be continued to the photodiodes respectively and exposed to a surface of the semiconductor substrate are formed only in portions adjacent to the high density impurity regions so as to transfer electric charge accumulated in each photodiode to corresponding one of the high density impurity regions.
A color solid-state image sensing device comprising:
- a semiconductor substrate having a surface portion where signal reading circuits and high density impurity regions connected to the signal reading circuits respectively are formed;
- a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate;
- a red light detecting photodiode formed in a deep portion of the semiconductor substrate;
- and
- a green light detecting photodiode formed in an intermediate portion between the shallow portion and the deep portion,
- wherein the color solid-state image sensing device further comprises MOS switches for transferring electric charge accumulated in a charge storage layer of each photodiode to corresponding one of the high density impurity regions when a read voltage is applied between the charge storage layer of the photodiode and the corresponding high density impurity region connected to the photodiode.
Dependencies are inferred from the claim text.