RF power amplifier
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKaname Motoyoshi, Masahiko Inamori, Kazuhiko Ohhashi, Hiroshi Sugiyama
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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKaname Motoyoshi, Masahiko Inamori, Kazuhiko Ohhashi, Hiroshi Sugiyama
Estimating the term…
A bias current to be supplied to an amplification circuit 60 is drawn out of a collector of a transistor Q11 of a bias circuit 10. The drawn-out bias current is input to a base of a transistor Q13 via an attenuation filter F2 and is output from an emitter of the transistor Q13 in the state where the voltage thereof is reduced by a level corresponding to Vbe. The attenuation filter F2 is conducted in a DC manner, and attenuates a component of a frequency fH(=2ft−fr) defined by a transmission frequency ft and a receiving frequency fr of a radio frequency signal. The bias current output from the emitter of the transistor Q13 is supplied to the amplification circuit 60 via an attenuation filter attenuates a component of a frequency fL(=|fr−ft|).
An RF power amplifier usable for an apparatus for transmitting and receiving a radio frequency signal, the RF power amplifier comprising:
Dependencies are inferred from the claim text.