High voltage switching circuit of nonvolatile memory device
AssigneeHynix Semiconductor Inc.
InventorSeok Lee
Life of this patent
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Abstract
A high-voltage switching circuit comprises: a high-voltage switch configured to transfer a high voltage; a pumping circuit configured to boost signals of first, second, and third nodes by conducting pumping operations in response to a plurality of clock signals; and a drive signal transmission circuit configured to boost the signal of the second node at a constant rate while maintaining a voltage level of the third node regardless of variation of a voltage level at the first node and transfer the boosted signal of the second node to the high-voltage switch, activating the high-voltage switch.
Claims13
A non-volatile memory device comprising:
- a high-voltage switch configured to transfer a voltage higher than an external power source supplying voltage to the device;
- a pumping circuit including first, second, and third nodes, the pumping circuit configured to boost signals of the first, second, and third nodes by conducting pumping operations in response to a plurality of clock signals;
- and
- a drive signal transmission circuit configured to boost the signal of the second node at a constant rate while maintaining a voltage level of the third node regardless of variation of a voltage level at the first node and to transfer the boosted signal of the second node to the high-voltage switch.
A non-volatile memory device comprising:
- a high-voltage switch configured to transfer a voltage higher than an external power source supplying voltage to the device;
- a high-voltage switching booster configured to boost a signal for driving the high-voltage switch in response to a plurality of clock signals;
- and
- a boosting enable circuit configured to activate the high-voltage switching booster,
- wherein the high-voltage switching booster comprises:
- a pumping circuit including first, second, and third nodes, the pumping circuit configured to boost signals of the first, second, and third nodes by conducting pumping operations in response to the plurality of clock signals;
- and
- a drive signal transmission circuit configured to maintain a voltage level of the third node at a constant level regardless of variation of a voltage level at the first node and to transfer the boosted drive signal to the high-voltage switch.
Dependencies are inferred from the claim text.