Semiconductor device
AssigneeNEC Electronics Corporation
InventorMasaji Nakano
Life of this patent
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Abstract
The semiconductor device 1 includes transistors 10, 20. Each of the transistors 10 (first transistor) is a MOSFET, and includes source regions 102, 106, a drain region 104, and a gate electrode 110. Each of the transistors 20 (second transistor) is also a MOSFET, and includes source regions 202, 206, a drain region 204, and a gate electrode 210. The source region 106 of the transistor 10 and the source region 202 of the transistor 20 are the identical region in the semiconductor substrate 90. In other words, the source region 106 and the source region 202 are shared by the both transistors.
Claims7
A semiconductor device comprising:
- a first transistor including a first source/drain region, a second source/drain region located opposite to said first source/drain region across a first gate region, a third source/drain region located opposite to said second source/drain region across a second gate region and electrically connected to said first source/drain region, and a first gate electrode provided in each of said first and second gate regions;
- and
- a second transistor including said third source/drain region, a fourth source/drain region located opposite to said third source/drain region across a third gate region, a fifth source/drain region located opposite to said fourth source/drain region across a fourth gate region and electrically connected to said first and third source/drain regions, and a second gate electrode provided in each of said third and fourth gate regions, and independently controlled from said first gate electrode.
Dependencies are inferred from the claim text.