Electron temperature measurement method, electron temperature measurement program for implementing the method, and storage medium storing the electron temperature measurement program
AssigneeTokyo Electron Limited
InventorKazuki Denpoh
Life of this patent
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Abstract
An electron temperature measurement method that enables an electron temperature as a plasma parameter to be measured precisely. A plasma is produced in a chamber 11 such that a wafer W is subjected to reactive ion etching therein. An ion energy distribution in the chamber 11 is measured. An ion energy distribution in the chamber 11 is simulated based on a set electron temperature. The measured ion energy distribution and the simulated ion energy distribution are compared. The electron temperature of the plasma is estimated based on results of the comparison mentioned above.
Claims7
An electron temperature measurement method for measuring an electron temperature of a plasma produced in a vacuum processing chamber in which an object to be processed is subjected to plasma processing, the method comprising:
- an ion energy distribution measurement step of measuring an ion energy distribution in the vacuum processing chamber;
- an ion energy distribution simulation step of simulating an ion energy distribution in the vacuum processing chamber based on a set electron temperature;
- an ion energy distribution comparison step of comparing the measured ion energy distribution and the simulated ion energy distribution;
- and
- an electron temperature estimation step of estimating the electron temperature of the plasma based on results of the comparison in said ion energy distribution comparison step.
An electron temperature measurement program for causing a computer to implement an electron temperature measurement method for measuring an electron temperature of a plasma produced in a vacuum processing chamber in which an object to be processed is subjected to plasma processing, the program comprising:
- an ion energy distribution measurement module for measuring an ion energy distribution in the vacuum processing chamber;
- an ion energy distribution simulation module for simulating an ion energy distribution in the vacuum processing chamber based on a set electron temperature;
- an ion energy distribution comparison module for comparing the measured ion energy distribution and the simulated ion energy distribution;
- and
- an electron temperature estimation module for estimating the electron temperature of the plasma based on results of the comparison in said ion energy distribution comparison module.
A computer-readable storage medium storing a program for causing a computer to implement an electron temperature measurement method for measuring an electron temperature of a plasma produced in a vacuum processing chamber in which an object to be processed is subjected to plasma processing, the program comprising:
- an ion energy distribution measurement module for measuring an ion energy distribution in the vacuum processing chamber;
- an ion energy distribution simulation module for simulating an ion energy distribution in the vacuum processing chamber based on a set electron temperature;
- an ion energy distribution comparison module for comparing the measured ion energy distribution and the simulated ion energy distribution;
- and
- an electron temperature estimation module for estimating the electron temperature of the plasma based on results of the comparison in said ion energy distribution comparison module.
Dependencies are inferred from the claim text.