Organic semiconductor device

An organic semiconductor device comprising:

• a first electrode;
• a first organic semiconductor film formed on the first electrode;
• a second organic semiconductor film formed on the first organic semiconductor film;
• an organic conductive film formed on the second organic semiconductor film;
• a second electrode formed on the organic conductive film;
• a third organic semiconductor film formed on the organic conductive film;
• and
• a third electrode formed on the third organic semiconductor film,
• wherein the second electrode does not overlap the first electrode and the third electrode;
• and
• wherein the third electrode at least partly overlaps the first electrode.

A manufacturing method of an organic semiconductor device, comprising the steps of:

• forming a first electrode over a substrate;
• applying a first solution onto the first electrode for forming a first organic semiconductor film;
• applying a second solution onto the first organic semiconductor film;
• drying the second solution at a temperature of not lower than 6° C. and not higher than 80° C. in a nitrogen atmosphere for forming a second organic semiconductor film;
• applying a third solution onto the second organic semiconductor film for changing the surface state of the second organic semiconductor film;
• applying a fourth solution onto the second organic semiconductor film, after applying the third solution;
• drying the fourth solution at a temperature of not lower than 60° C. and not higher than 80° C. in a nitrogen atmosphere for forming an organic conductive film;
• applying a fifth solution onto the organic conductive film;
• drying the fifth solution at a temperature of not lower than 60° C. and not higher than 80° C. in a nitrogen atmosphere for forming a third organic semiconductor film;
• removing a part of the third organic semiconductor film;
• forming a second electrode on a part of the exposed organic conductive film, wherein the second electrode does not overlap the first electrode;
• and
• forming a third electrode on the third organic semiconductor film, wherein the third electrode at least partly overlaps the first electrode.