Piezoelectric resonator element and method of manufacturing same
AssigneeSony Corporation
InventorKei Sato
Life of this patent
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Abstract
A piezoelectric resonator element and method of manufacturing same are provided. The piezoelectric resonator element having a lower electrode, a piezoelectric substance layer, and an upper electrode disposed in this order on a substrate with an air layer between the substrate and the lower electrode, and having a laminated structure of the lower electrode, the piezoelectric substance layer, and the upper electrode in at least a part of the piezoelectric resonator element, wherein internal stress of the piezoelectric substance layer is −300 MPa to 90 MPa.
Claims3
A piezoelectric resonator element comprising:
- a lower electrode, a piezoelectric substance layer, and an upper electrode disposed in sequential order on a substrate with an air layer between said substrate and said lower electrode, and having the laminated structure of said lower electrode, said piezoelectric substance layer, and said upper electrode in at least a part of said piezoelectric resonator element,
- wherein internal stress of said piezoelectric substance layer ranges from −300 MPa to 90 MPa.
A method of manufacturing a piezoelectric resonator element, comprising:
- pattern-forming a sacrifice layer on a substrate;
- forming a lower electrode over said substrate in a state of covering at least a part of said sacrifice layer;
- forming a piezoelectric substance layer over said substrate in a state of covering said lower electrode;
- forming an upper electrode on said piezoelectric substance layer in a state of at least a part of said upper electrode being laminated above said lower electrode over said sacrifice layer;
- and
- forming an air layer under a laminated structure of said lower electrode, said piezoelectric substance layer, and said upper electrode by removing said sacrifice layer;
- wherein, said piezoelectric substance layer is formed such that internal stress of said piezoelectric substance layer ranges from −300 MPa to 90 MPa by using a sputtering method and adjusting pressure of a processing atmosphere and a sputtering power.
Dependencies are inferred from the claim text.