Semiconductor Chip and Method for Manufacturing the Same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
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Abstract
A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
Claims24
A semiconductor chip comprising:
- a first device formative layer including a first semiconductor device with a thickness of at most 50 μm provided over a substrate;
- and
- a second device formative layer including a second semiconductor device with a thickness of at most 50 μm formed over the first device formative layer,
- wherein the first semiconductor device and the second semiconductor device are electrically connected through an anisotropic conductive particle.
A semiconductor chip comprising:
- a first device formative layer including a CPU with a thickness of at most 50 μm provided over a substrate;
- and
- a second device formative layer including a semiconductor device with a thickness of at most 50 μm formed over the first device formative layer,
- wherein the CPU and the semiconductor device are electrically connected through an anisotropic conductive particle.
A semiconductor chip comprising:
- a first device formative layer including a MPU with a thickness of at most 50 μm provided over a substrate;
- and
- a second device formative layer including a semiconductor device with a thickness of at most 50 μm formed over the first device formative layer,
- wherein the MPU and the semiconductor device are electrically connected through an anisotropic conductive particle.
A semiconductor chip comprising:
- a first device formative layer including a memory with a thickness of at most 50 μm provided over a substrate;
- and
- a second device formative layer including a semiconductor device with a thickness of at most 50 μm formed over the first device formative layer,
- wherein the memory and the semiconductor device are electrically connected through an anisotropic conductive particle.
Dependencies are inferred from the claim text.