Semiconductor device and semiconductor-device manufacturing method

Abstract

In a semiconductor-device manufacturing method, a metal bump is formed through a plurality of barrier metal layers on an opening which is selectively formed in an insulation layer covering a semiconductor substrate. The metal bump is formed on the plurality of barrier metal layers. A first etching process that selectively removes a lower metal layer among the plurality of barrier metal layers is performed by using an upper metal layer among the plurality of barrier metal layers as a mask. A reflow process that covers an end face of the lower metal layer with a metal that forms the metal bump is performed. After the lower metal layer end face is covered with the metal, a second etching process that removes a barrier metal residue on a surface of the insulation layer in a circumference of the metal bump is performed.

Dependencies are inferred from the claim text.