Gallium nitride material-based monolithic microwave integrated circuits

Abstract

Monolithic microwave integrated circuits are provided. The MMICs include at least one semiconductor material-based device (e.g., a gallium nitride material-based device) and may also include one or more additional circuit elements. The circuit elements may be active circuit elements (e.g., semiconductor material-based devices such as transistors or diodes) or passive circuit elements (e.g., inductors, capacitors, resistors). The MMICs can exhibit excellent electrical properties including high output powers, high power densities, wide bandwidths, high operating voltages, high efficiencies, high gains, as well as the ability to transmit signals at high frequencies (e.g., greater than 2 GHz) and operate at higher temperatures (e.g., greater than or equal to 150° C.), amongst others.

Dependencies are inferred from the claim text.