US 2006/0214268 A1 · SiC semiconductor device

Abstract

A semiconductor device includes: a passivation film; a first semiconductor layer that has a first main component of 4H—SiC of a first conductivity type; and a second semiconductor layer that has a second main component of 4H—SiC of a second conductivity type. The second semiconductor layer has a pn-junction with the first semiconductor layer. The pn-junction has a junction edge. The first and second semiconductor layers further include a local area that includes the junction edge. The local area has a first principal plane that interfaces with the passivation film. A normal to the first principal plane tilts by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of <01-10>.

Claims12

Dependent claims

A semiconductor device comprising:

a passivation film;
a first semiconductor layer that has a first main component of 4H—SiC of a first conductivity type;
and
a second semiconductor layer that has a second main component of 4H—SiC of a second conductivity type, the second semiconductor layer having a pn-junction with the first semiconductor layer, the pn-junction having a junction edge,
the first and second semiconductor layers further including a local area that includes the junction edge, the local area having a first principal plane that interfaces with the passivation film, and a normal to the first principal plane being tilted by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of <01-10>.

2 more elements

Dependencies are inferred from the claim text.

SiC semiconductor device

Life of this patent

SiC semiconductor device

Life of this patent

Abstract

Claims12