Integrated circuit with capacitor and method for the production thereof

An integrated circuit comprising:

• a capacitor that comprises:
• an electrically conductive base electrode;
• a dielectric on the base electrode, the dielectric containing an oxide of a material contained in the base electrode;
• and
• an electrically conductive covering electrode, the covering electrode covering the dielectric such that a peripheral edge of the dielectric is uncovered by the covering electrode;
• an electrically insulating base layer that includes a cutout adjacent to the dielectric arranged on a side of the base electrode which faces the dielectric;
• and
• a metallization layer arranged on a side of the base electrode that faces away from the dielectric, the metallization layer includes interconnects comprising at least one of:
• copper or a copper alloy with a copper content of greater than about 90%, or aluminum or an aluminum alloy with an aluminum content of greater than about 90%.

A method for fabricating a capacitor comprising the following, carried out without being restricted by the order in which they are presented:

• providing an electrically conductive base electrode layer;
• providing a base layer after the base electrode layer has been produced, with the base electrode layer in an unpatterned state;
• applying a resist layer to the base layer;
• selectively irradiating and developing the resist layer;
• patterning the base layer with the developed resist layer, the base electrode layer being uncovered in a region in accordance with the developed resist layer;
• and
• carrying out an oxidation of the base electrode layer in the uncovered region of the base electrode layer following the patterning of the base layer.

A method for fabricating a capacitor comprising the following, carried out without being restricted by the order in which they are presented:

• providing an electrically conductive base electrode layer;
• providing a base layer after the base electrode layer has been produced, with the base electrode layer in an unpatterned state;
• patterning the base layer to form a base electrode;
• carrying out an oxidation of the base electrode layer in an uncovered region of the base electrode layer following the patterning of the base layer to form a dielectric;
• providing a covering electrode layer on the dielectric;
• and
• patterning the covering electrode layer to form a covering electrode such that a peripheral edge of the dielectric is uncovered by the covering electrode.