Production method of strained silicon-SOI substrate and strained silicon-SOI substrate produced by same

Abstract

A strained Si-SOI substrate is produced by a method comprising: growing a SiGe mixed crystal layer on an SOI substrate having a Si layer of not less than 5 nm in thickness and a buried oxide layer; forming a protective film on the SiGe mixed crystal layer; implanting light element ions into a vicinity of an interface between the silicon layer and the buried oxide layer; a first heat treatment for heat treating the substrate at a temperature of 400 to 1000° C. in an inert gas atmosphere; a second heat treatment for heat treating the substrate at a temperature not lower than 1050° C. in an oxidizing atmosphere containing chlorine; removing an oxide film from the surface of the substrate, and forming a strained silicon layer on the surface of the substrate.

Dependencies are inferred from the claim text.