US 2006/0214254 A1 · Semiconductor device and manufacturing method of the same

Abstract

To suppress occurrence of defects in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.

Claims19

Dependent claims

A semiconductor device comprising a plurality of element isolating portions made of an insulating film embedded into a trench on a major surface of a semiconductor substrate, wherein:

in a first region where a width of an active region is relatively small, a recess amount of each element isolating portion corresponding thereto is relatively large, whereas in a second region where a width of an active region is relatively large, a recess amount of each element isolating portion corresponding thereto is equal to zero, or relatively small.

Dependencies are inferred from the claim text.

Facts

Application

11/443,226Filed 31 May 2006

Priority

JP 2002-18232324 Jun 2002

Published

28 Sep 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10B 41/40
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the peripheral circuit region
H10B 41/49
Simultaneous manufacture of periphery and memory cells: comprising different types of peripheral transistor
H10D 30/601
Insulated-gate field-effect transistors [IGFET]: having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
H10D 64/01326
Characterised by the conductor: aspects related to lithography, isolation or planarisation of the conductor

Semiconductor device and manufacturing method of the same

Life of this patent

Semiconductor device and manufacturing method of the same

Life of this patent

Abstract

Claims19