Photodiodes with anti-reflection coating
AssigneeIntersil Americas Inc.
InventorsPerumal Ratnam, Dong Zheng
Life of this patent
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Abstract
A method of forming efficient photodiodes includes the steps of providing a substrate having a p-surface region on at least a portion thereof, implanting a shallow n-type surface layer into the surface region, and forming a multilayer first anti-reflective (AR) coating on the n-type surface layer. The surface layer is preferably an As or Sb surface layer. The forming the AR step include the steps of depositing or forming a thin oxide layer having a thickness of between 1.5 nm and 8 nm on the shallow surface layer, and depositing a second dielectric different from the thin oxide layer on the thin oxide layer, such as a silicon nitride layer.
Claims12
A method of forming efficient photodiodes, comprising the steps of:
- providing a substrate having a p− surface region on at least a portion thereof;
- implanting a n-type surface layer into said surface region, and
- forming a multi-layer first anti-reflective (AR) coating on said n-type surface layer, wherein said forming step comprises the steps of:
- depositing or forming a thin oxide layer having a thickness of between 1.5 nm and 8 nm on said n-type surface layer;
- depositing a second dielectric layer different from said thin oxide layer on said thin oxide layer.
A photodiode, comprising:
- a substrate having a p-surface region on at least a portion thereof;
- an n-type surface layer diffused into said surface region, and
- a multi-layer first anti-reflective (AR) coating on said n-type surface layer, wherein said first AR coating comprises:
- a thin oxide layer having a thickness of between 1.5 and 8 nm on said n-type surface layer;
- a second dielectric layer different from said thin oxide layer on said thin oxide layer.
Dependencies are inferred from the claim text.