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US 2006/0214248 A1Published application
Single crystal silicon sensor with additional layer and method of producing the same
AssigneeAnalog Devices, Inc.
InventorsThomas Nunan, Timothy Brosnihan
Life of this patent
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Abstract
A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.
Claims15
A SOI-based MEMS device comprising:
- a base layer;
- a device layer;
- an insulator layer between the base layer and the device layer;
- and
- a deposited layer having a portion that is spaced from the device layer;
- the device layer being between the insulator layer and the deposited layer,
- the device layer having structure, the deposited layer forming a cap to seal the structure.
4 more elements
A MEMS inertial sensor comprising:
- a single crystal silicon layer having a top surface, the single crystal silicon layer also having sensing structure and a second component;
- and
- a deposited additional layer adjacent to the top surface of the single crystal silicon layer, the deposited additional layer having a portion that is spaced from the top surface, the deposited additional layer being conductive to serve as an interconnect for the sensing structure on the single crystal silicon layer, the deposited additional layer electrically connecting the sensing structure with the second component.
A MEMS device comprising:
- a single crystal silicon layer having a top surface, the single crystal silicon layer also having a movable structure;
- and
- a deposited additional layer adjacent to the top surface of the single crystal silicon layer, the deposited additional layer having a portion that is spaced from the top surface, the deposited layer forming a stationary actuator for actuating the movable structure.
Dependencies are inferred from the claim text.