Semiconductor device and method of manufacturing the same
AssigneeRenesas Technology Corp.
InventorsJiro Yugami, Masao Inoue, Kenichi Mori, Shinsuke Sakashita
Life of this patent
Estimating the term…
Abstract
The semiconductor device includes a semiconductor substrate, a gate insulating film formed in contact with an upper side of the semiconductor substrate, and a gate electrode formed on the upper side of the gate insulating film and made of metal nitride or metal nitride silicide. A buffer layer for preventing diffusion of nitrogen and silicon is interposed between the gate insulating film and the gate electrode. Preferably, the buffer layer has a thickness of 5 nm or less. In the case where gate electrode contains Ti elements, and the gate insulating film contains Hf elements, the buffer layer preferably contains a titanium film.
Claims8
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed in contact with an upper side of said semiconductor substrate;
- and
- a gate electrode made of metal nitride or metal nitride silicide and formed on the upper side of said gate insulating film, wherein
- a buffer layer preventing diffusion of the nitrogen and silicon is interposed between said gate insulating film and said gate electrode.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a layered structure including a gate insulating film, a buffer layer and a gate electrode successively layered in this order on a surface of a semiconductor substrate;
- forming a source region and a drain region adjacent to said layered structure at a surface of said semiconductor substrate;
- and
- activating said source and drain regions.
Dependencies are inferred from the claim text.