Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device including a transistor formed on a semiconductor substrate, which comprises the steps of:

• forming a silicon nitride film on the semiconductor substrate;
• forming a high dielectric gate insulation film of a high dielectric constant material on the silicon nitride film;
• forming a gate electrode layer on the high dielectric gate insulation film;
• patterning the silicon nitride film, the high dielectric gate insulation film and the gate electrode layer to form a gate layer structure;
• and
• forming a junction region in the semiconductor substrate with the gate layer structure as a mask, and
• which further comprises the step of making thermal processing in an oxidating ambient atmosphere at a prescribed timing after the step of forming the gate electrode layer.

A method for fabricating a semiconductor device including a p-type transitor formed in a first region of a semiconductor substrate and an n-type transitor formed in a second region of the semiconductor substrate, which comprises the steps of:

• forming a silicon nitride film on the semiconductor substrate;
• forming a high dielectric gate insulation film of a high dielectric constant material on the silicon nitride film;
• forming a gate electrode layer on the high dielectric gate insulation film;
• patterning the silicon nitride film, the high dielectric gate insulation film ad the gate electrode layer to form a first gate layer structure in the first region and a second gate layer structure in the second region of the semiconductor substrate, and
• forming a first junction region in the first area of the semiconductor substrate with the first gate layer structure as a mask, and a second junction region in the second area of the semiconductor substrate with the second gate layer structure as a mask, and
• which further comprises the step of making thermal processing in an oxidating ambient atmosphere at a prescribed timing after the step of forming the gate electrode layer.