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US 2006/0214242 A1Published application
Termination for SiC trench devices
AssigneeInternational Rectifier Corporation
InventorsRossano Carta, Laura Bellemo
Life of this patent
Estimating the term…
Abstract
A silicon carbide device has a termination region that includes a mesa region that links the termination region to an active area of the device and that includes one or more trenches.
Claims26
A semiconductor device comprising:
- a silicon carbide body having first and second opposing major surfaces;
- an active area formed along said first major surface of said silicon carbide body;
- a termination region formed along said first major surface of said silicon carbide body and defining said active area, said termination region including a termination trench formed within said silicon carbide body and having sidewalls and a bottom surface;
- a guard ring formed within said silicon carbide body along said sidewalls and said bottom surface of said termination trench;
- and
- a field insulation body covering said termination trench.
3 more elements
Dependencies are inferred from the claim text.