Transistor, method for manufacturing thereof, substrate for an electrooptical device
AssigneeSeiko Epson Corporation
InventorHiroyuki Shimada
Life of this patent
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Abstract
Aspects of the invention can provide a transistor that can include a supporting substrate, a semiconductor film formed on an underlying insulating film provided on the supporting substrate and including a channel region and source and drain regions, and a gate electrode provided above the channel region. The semiconductor film can include a lightly doped region in which an impurity is injected at a low concentration between the channel region and the source and drain regions. The source and drain regions can include a heavily doped region in which an impurity is injected at a higher concentration than the lightly doped region. At least part of the lightly doped region provided along an inner wall of a groove can be provided on the supporting substrate.
Claims9
A transistor, comprising:
- a supporting substrate;
- a semiconductor film formed on an underlying insulating film provided on the supporting substrate and including channel, source and drain regions;
- and
- a gate electrode provided above the channel region;
- the semiconductor film including a lightly doped region in which an impurity is injected at a low concentration between the channel region and the source and drain regions;
- the source and drain regions including a heavily doped region in which an impurity is injected at a higher concentration than the lightly doped region;
- and
- at least part of the lightly doped region provided along an inner wall of a groove provided in the supporting substrate.
A transistor, comprising:
- an insulating substrate;
- a semiconductor film formed on the insulating substrate and including channel, source and drain regions;
- and
- a gate electrode provided above the channel region;
- the semiconductor film includes a lightly doped region in which an impurity is injected at a low concentration between the channel region and the source and drain regions;
- the source and drain regions include a heavily doped region in which an impurity is injected at a higher concentration than the lightly doped region;
- and
- at least part of the lightly doped region is provided on at least part of an inner wall of a groove provided in the insulating substrate.
A method for manufacturing a transistor, comprising:
- providing a semiconductor film on an insulating substrate provided with a groove by forming a first portion of the semiconductor film in an inner surface of the groove;
- providing a gate electrode above the semiconductor film;
- injecting an impurity into the semiconductor film at a predetermined angle to the insulating substrate;
- exposing a second portion other than the first portion of the semiconductor film, after an insulating film covering the gate electrode and the semiconductor film are provided, by etching part of the insulating film;
- and
- providing a source or drain region by injecting an impurity into at least part of the second portion.
A method for manufacturing a transistor, comprising:
- providing an underlying insulating film on a supporting substrate provided with a groove;
- providing a semiconductor film on the underlying insulating film by forming a first portion of the semiconductor film inside the groove;
- providing a gate electrode above the semiconductor film;
- injecting an impurity into the semiconductor film at a predetermined angle to the supporting substrate;
- exposing a second portion other than the first portion of the semiconductor film, after an insulating film covering the gate electrode and the semiconductor film are provided, by etching part of the insulating film;
- and
- providing a source or drain region by injecting an impurity into at least part of the second portion.
Dependencies are inferred from the claim text.