FinFET semiconductor device
OwnerHari Ananthanarayanan, Aditya Bansal +1inventors
InventorsHari Ananthanarayanan, Aditya Bansal, Kaushik Roy
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Abstract
A FinFET semiconductor device includes a source region, a drain region, and a channel region defined therebetween. The source region, drain region, and channel region form a fin structure extending upwardly away from a substrate to a fin height greater than a standard minimum fin height.
Claims28
A FinFET semiconductor device fabricated on a substrate according to a predetermined technology node process that defines a minimum fin height, the FinFET semiconductor device comprising:
- a source region,
- a drain region, and
- a channel region defined between the source and drain regions, the source, drain and channel regions forming a fin structure extending upwardly away from the substrate to a fin height greater than the minimum fin height.
An electrical circuit comprising:
- a FinFET semiconductor device fabricated on a substrate according to a predetermined technology node process that defines a minimum fin height and a minimum supply voltage, the FinFET semiconductor device having a source region, a drain region and a channel region defined therebetween, the source, drain and channel regions forming a fin structure extending upwardly away from the substrate to a fin height greater than the minimum fin height, the fin height allowing for a supply voltage applied to the FinFET semiconductor device that is less than the minimum supply voltage.
A method of fabricating a FinFET semiconductor device on a substrate according to a predetermined technology node fabrication process that defines a minimum fin height, the method comprising:
- forming on the substrate a fin structure having a source region, a drain region and a channel region therebetween, the fin structure extending upwardly away from the substrate to a fin height greater than the minimum fin height,
- forming a gate region adjacent to the channel region on at least one side of the fin structure.
An SRAM device fabricated on a substrate according to a predetermined technology node process that defines a minimum fin height, the SRAM device comprising at least one FinFET device having a source region, a drain region defining a channel region therebetween the source, drain and channel regions together forming a fin structure extending upwardly away from the substrate to a fin height that is greater than the minimum fin height.
Dependencies are inferred from the claim text.