Power semiconductor devices and methods of manufacture

A semiconductor device comprising:

• a drift region of a first conductivity type;
• a well region extending above the drift region and having a second conductivity type opposite the first conductivity type;
• an active trench extending through the well region and into the drift region, the active trench having its sidewalls and bottom lined with dielectric material, and substantially filled with a first conductive layer and a first gate conductive layer, the first conductive layer being disposed below the first gate conductive layer and separated therefrom by inter-electrode dielectric material;
• source regions having the first conductivity type formed in the well region adjacent the active trench;
• and
• a first Schottky structure formed on a first mesa between two adjacent trenches.

A semiconductor device comprising:

• a drift region of a first conductivity type;
• a well region extending above the drift region and having a second conductivity type opposite the first conductivity type;
• a plurality of trenches extending through the well region and into the drift region, each of the plurality of trenches having its sidewalls and bottom lined with dielectric material, and substantially filled with a first conductive layer and a second conductive layer, the second conductive layer being disposed below the first conductive layer and separated therefrom by inter-electrode dielectric material;
• source regions having the first conductivity type formed in the well region adjacent a trench;
• and
• a first Schottky structure formed on a first mesa between two adjacent trenches of the plurality of trenches.