Thin-film capacitor element and semiconductor device
AssigneeFujitsu Limited
InventorsJohn David Bariecki, Takeshi Shioga, Kazuaki Kurihara
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Abstract
A thin-film capacitor element has at least a lower electrode, a ferroelectric layer, and an upper electrode. The upper electrode adds a compressive stress of 10 MPa to 5 GPa to the ferroelectric layer. The upper electrode includes at least one oxide selected from PtOx, IrOx, RuOx, SrRuOy, and LaNiOy.
Claims15
A thin-film capacitor element having at least a lower electrode, a ferroelectric or paraelectric layer, and an upper electrode on a substrate, wherein the upper electrode adds a compressive stress to the ferroelectric layer.
A semiconductor device formed on a semiconductor substrate, and having a source electrode, a drain electrode, and a gate electrode, the semiconductor device having at least a lower electrode, a ferroelectric layer, and an upper electrode on the substrate, wherein the upper electrode adds a compressive stress to the ferroelectric layer.
Dependencies are inferred from the claim text.