Method of manufacturing semiconductor device
AssigneeFujitsu Limited
InventorWensheng Wang
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Abstract
A Pt film (24), a PLZT film (25), and a top electrode film (26) are formed above a semiconductor substrate (11). Next, the top electrode film (26) is patterned. Then, a PLZT film (27) covering an exposed portion of the PLZT film (25) is formed as an evaporation preventing film. Then, heat treatment is performed in an oxidative atmosphere to recover damage sustained to the PLZT film (25). Heat treatment is not performed between patterning of the top electrode film (26) and formation of the PLZT film (27). Thereafter, a ferroelectric capacitor is formed by patterning the PLZT film (25) and the Pt film (24).
Claims19
A method of manufacturing a semiconductor device, comprising the steps of:
- forming laminate composed of a bottom electrode film being a raw material film of a low electrode, a ferroelectric film being a raw material film of a capacitor insulating film and a top electrode film being a raw material film of the top electrode, of a ferroelectric capacitor;
- patterning at least said top electrode film;
- forming an evaporation preventing film covering an exposed portion of at least said ferroelectric film, said evaporation preventing film containing the same element as said ferroelectric film;
- and
- performing heat treatment for said ferroelectric film in an oxidative atmosphere so as to recover from sustained damage,
- wherein heat treatment is not performed between patterning said top electrode and forming said evaporation preventing film.
Dependencies are inferred from the claim text.