Thin-film capacitor element and semiconductor device

Abstract

To provide a thin-film capacitor and a semiconductor device capable of preventing a reduction in the dielectric constant due to a residual tensile stress in a ferroelectric layer in a thin-film capacitor using the ferroelectric substance, and increasing the dielectric constant and increasing an electric capacity. In a thin-film capacitor 10 having a lower electrode 2, a ferroelectric layer 3, and an upper electrode 4 on a substrate 1, the thin-film capacitor 10 has the upper electrode 4 that adds a compressive stress to the ferroelectric layer 3, and a residual compressive stress in the upper electrode 4 is within a range from 108 to 6×1011 dyne/cm2.

Dependencies are inferred from the claim text.