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US 2006/0214204 A1Published application
Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same
OwnerDong-Chul Yoo, Byoung Bae +3inventors
InventorsDong-Chul Yoo, Byoung Bae, Ji-Eun Lim, Dong-Hyun Im, Myung-Gon Kim
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Abstract
A ferroelectric capacitor structure can include a ferroelectric layer on a lower electrode and an upper electrode on the ferroelectric layer, the upper electrode including a metal oxide and a metal.
Claims42
A ferroelectric structure comprising:
- a lower electrode including a first metal;
- a ferroelectric layer formed on the lower electrode;
- and
- an upper electrode formed on the ferroelectric layer, the upper electrode including a first metal oxide doped with a second metal, and a third metal.
1 more element
A ferroelectric capacitor comprising:
- a ferroelectric layer on a lower electrode;
- and
- an upper electrode on the ferroelectric layer, the upper electrode including a metal oxide and a metal.
A method of forming a ferroelectric capacitor comprising:
- forming a ferroelectric layer on a lower electrode;
- and
- forming an upper electrode on the ferroelectric layer, the upper electrode including a metal oxide and a metal.
A semiconductor device comprising:
- a semiconductor substrate having a contact region;
- an insulation layer formed on the semiconductor substrate;
- a pad contacting the contact region through the insulation layer;
- a lower electrode formed on the pad and the insulation layer, the lower electrode including a first metal;
- a ferroelectric layer pattern formed on the lower electrode;
- and
- an upper electrode formed on the ferroelectric layer pattern, the upper electrode including a first metal oxide doped with a second metal, and a third metal.
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A method of manufacturing a semiconductor device comprising:
- forming a contact region on a semiconductor substrate;
- forming an insulation layer on the semiconductor substrate;
- forming a pad contacting the contact region through the insulation layer;
- forming a lower electrode including a first metal on the pad and the insulation layer;
- forming a ferroelectric layer pattern on the lower electrode;
- and
- forming an upper electrode on the ferroelectric layer pattern, the upper electrode including a first metal oxide doped with a second metal, and a third metal.
4 more elements
Dependencies are inferred from the claim text.