Apparatus and methods for shielding integrated circuitry

A pressure sensor comprising:

• a conductively-doped silicon substrate, the substrate comprising a flexible diaphragm;
• a buried silicon oxide layer below a top surface of the substrate;
• a device layer over the buried silicon oxide layer, the device layer electrically responsive to flexing of the diaphragm;
• an insulative layer over the device layer;
• a conductive shield layer over the insulative layer;
• and
• an electrical conduit which electrically couples the shield layer to the silicon substrate below the buried silicon oxide layer.

A method of forming an electronic device, the method comprising:

• providing a semiconductor and a first insulative layer over at least a portion of the semiconductor;
• forming a device layer over the first insulative layer;
• forming a second insulative layer over the device layer;
• forming a conductive shield layer over the second insulative layer;
• and
• electrically coupling the shield layer to the semiconductor.

A method of sensing a pressure differential, the method comprising:

• providing a device comprising a housing for at least partially enclosing a conductive substrate that comprises a flexible diaphragm having first and second sides, a conductive shield layer positioned over the substrate wherein the shield layer is electrically coupled to the substrate, and a device layer positioned between the substrate and the shield layer, the device layer electrically being responsive to flexing of the diaphragm and whereby the first side of the diaphragm is exposed to a first pressure;
• exposing the second side of the diaphragm to a second pressure different from the first pressure so as to define a pressure differential, whereby said pressure differential causes flexing of the diaphragm in response thereto;
• and
• sensing the electrical response of the device layer to the flexing.