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US 2006/0214199 A1Published application
Solid-state image sensing device
AssigneeFuji Photo Film Co., Ltd.
InventorsTomoki Inoue, Shinji Uya
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Abstract
A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein; and third impurity regions as defined herein.
Claims8
A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising:
- first impurity regions of a first conduction type electrically connected to the photoelectric conversion films and provided in a surface of the semiconductor substrate for accumulating signal charges generated in the photoelectric conversion films;
- second impurity regions of the first conduction type provided under the first impurity regions and lower in density than the first impurity regions for accumulating the signal charges accumulated in the first impurity regions;
- signal charge reading regions for reading the signal charges accumulated in the second impurity regions;
- and
- third impurity regions of a second conduction type provided in the surface of the semiconductor substrate and between the first impurity regions and the signal charge reading regions and reverse to the first conduction type.
2 more elements
Dependencies are inferred from the claim text.